PART |
Description |
Maker |
J113 J112 J111 |
RES CURRENT SENSE .005 OHM .75W N-channel silicon field-effect transistors
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications
|
TOSHIBA
|
2SK365 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
2SJ103 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc Freescale Semiconductor, In...
|
NIMD6302R206 NIMD6302R2 NIMD6302R2-06 |
HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
SSM3J120TU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications
|
Toshiba Semiconductor
|
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
HAS100-S HAS50-S HAS200-S HAS600-S HAS300-S HAS400 |
Current Transducers HAS 50 to 600-S Current Transducers HAS 50 to 600-S MAGNETIC FIELD SENSOR-HALL EFFECT, RECTANGULAR
|
LEM[LEM]
|
AH1802-SNG-7 AH1802-FJG-7-01 AH1802-WG-7 AH1802-FY |
Micropower, Ultra-Sensitive Omnipolar Hall-Effect Switch MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, RECTANGULAR, SURFACE MOUNT MAGNETIC FIELD SENSOR-HALL EFFECT, 1-4mT, 0.30V, SQUARE, SURFACE MOUNT 2 X 2 MM, GREEN, DFN-6
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Diodes, Inc. Diodes Inc. Diodes Incorporated
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